讲座时间：2026年8月26日（星期三）14:30

讲座地点：色情漫画 犀浦校区综合楼148

主讲人：Josef Lutz，教授

主持人：谢东

主讲人简介：

Josef Lutz教授，德国开姆尼茨工业大学资深教授，是功率半导体可靠性领域泰斗级学者，主要研究功率半导体器件设计及老化机理、芯片与封装可靠性、动态鲁棒性以及电动汽车可靠驱动，负责德国、欧盟及其他国家多项国际合作研究项目；发明局域寿命控制二极管（CAL-diode，首个在所有应用条件下均具有软恢复特性的二极管，自1995年已大批量生产应用）、GTO晶闸管和快速恢复二极管，是赛米控和英飞凌公司25多项专利的发明人或共同发明人；发表了300多篇国际期刊和会议论文，出版专著（含合著）8部，以第一作者身份出版的电力电子领域权威著作《功率半导体器件-原理、特性和可靠性》是功率半导体器件研究者的核心参考书，通过中文、英文、德文等版本在全球广泛发行。

Josef Lutz教授是IEEE高级会员，PCIM Europe董事，德国开姆尼茨微电子中心（ZfM）董事，EPE、ISPS、CIPS、ISPSD等技术委员会成员，Microelectronics Reliability编辑顾问委员会成员，TPEL的客座编辑，入选电力电子领域全球Top 1%高被引研究者，获俄罗斯北高加索联邦大学荣誉教授称号，获欧洲电力电子及应用大会（EPE 2017）“Outstanding Achievement Award”。

报告简介：

This lecture focuses on the application reliability of Silicon Carbide (SiC) and Gallium Nitride (GaN) wide bandgap (WBG) power semiconductors. The presentation will begin by contrasting the material properties of SiC and GaN with those of traditional Silicon (Si), highlighting the implications of these differences for device reliability.

For SiC, the primary focus will be on the SiC MOSFET, with particular attention to its most vulnerable point: the gate oxide. Key phenomena such as threshold voltage hysteresis and bias temperature instability (BTI) will be discussed, alongside new methodologies for reliability testing. Regarding GaN technology, the presentation will center on the High Electron Mobility Transistor (HEMT). The discussion will address its critical weakness, i.e., the dynamic on-resistance effect, whereby on-state losses increase depending on operational conditions. Recent test results on state-of-the-art devices will be presented to illustrate these challenges.

Finally, power cycling tests, which are crucial for assessing the package and interconnect reliability for both material systems, will be thoroughly examined. This lecture aims to provide engineers and researchers with essential insights into the reliability constraints and testing protocols for WBG power devices.